shantou huashan electronic devices co.,ltd . non insulated type sensitive gate triac (to - 126 package) ? features * repetitive peak off - state voltage: 600v * r.m.s on - state current(i t(rms) =4a) * high commutation dv/dt * sensitive gate triggering 4 mode ? general description the devices is sensitive gate triac suitable for direct coupling to ttl,htl,cmos and application such as various logic functions, low power ac switching applications , such as fan speed, small light controllers and home appliance equipment. ? absolute maximum ratings ? t a =25 ??? t stg ?a?a storage temperature ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- - 40~125 ?? t j ?a?a operating junction temperature ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- - 40~125 ?? p gm ?a?a peak gate power dissipation ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 1.5w p g ? av ? ?a?a average gate power dissipation ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 0.1w v drm ?a?a repetitive peak off - state voltage ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 600v i t ? rms ? ?a?a r.m.s on - state current ? ta=95 ??? ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 4.0a v gm ?a?a peak gate voltage ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 7.0v i gm ?a?a peak gate current ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 1.0a i tsm ?a?a surge on - state current (one cycle, 50/60hz,peak,non - repetitive) ?- ?-?-?-?-?- 30/33a ht n 4a60 s
shantou huashan electronic devices co.,ltd . ? electrical characteristics ? t a =25 ?? ? symbol items min. typ. max. unit conditions i drm repetitive peak off - state current 1.0 ma v d =v drm , single phase, half wave, t j =125 ?? v tm peak on - state voltage 1.7 v i t =6a, inst. measurement i+ gt1 gate trigger current ??? 5.0 ma v d =6v, r l =10 ohm i - gt1 gate trigger current ?v? 5.0 ma v d =6v, r l =10 ohm i - gt3 gate trigger current ?t? 5.0 ma v d =6v, r l =10 ohm i+ gt3 gate trigger current ??? 10.0 ma v d =6v, r l =10 ohm v+ gt1 ga te trigger voltage ??? 1.4 v v d =6v, r l =10 ohm v - gt1 gate trigger voltage ?v? 1.4 v v d =6v, r l =10 ohm v - gt3 gate trigger voltage ?t? 1.4 v v d =6v, r l =10 ohm v+ gt3 gate trigger voltage ??? 1.8 v v d =6v, r l =10 ohm v gd non - t rigger gate voltage 0.2 v t j = 125 ?? ,v d =1/2v drm (dv/dt)c critical rate of rise of off - state voltage at commutation 11 v/s t j =125 ?? ,v d =2/3v drm (di/dt)c= - 2.0a/ms i h holding current 10 ma rth(j - c) thermal resistance 3.5 ?? /w junction to case ht n 4a60 s
shantou huashan electronic devices co.,ltd . ? performance curves fig 1. gate characteristics fig 2. on - state voltage gat e current ? ma ? on - state voltage ? v ? fig 3 . gate trigger voltage vs. junction fig 4 . on state current vs. maximum temperature power dissipation fig 5 . on state current vs. fig 6 . surge on - state current rating allowable case temperature ( non - repetitive ) rms on - state current [ a] time ? cycles ? allowable case temp. [ ?? c] surge on - state current [ a] power dissipation [w] on - state current [a] on - state voltage (v) rms on - state current [a] junction temperature [ ?? ] ht n 4a60 s
shantou huashan electronic devices co.,ltd . fig 7. gate trigger current vs. fig 8. transient thermal impedance junction temperature junction tempe rature [ ?? ] fig 9. gate trigger characteristics test circuit fig 9. gate trigger characteristics test circuit transient thermal impedance [ ?? /w ] 10 |? 10 |? 10 |? 10 |? junction temperature [ ?? ] time ? sec ? test procedure ? test procedure v test procedure t test procedure ? ht n 4a60 s
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